| 摘要 |
<p>The present invention relates to a high-density variable resistive memory device and a manufacturing method thereof. The high-density variable resistive memory device comprises a semiconductor substrate, a plurality of word lines, a plurality of bit lines, a plurality of memory cells, and an insulating film. The semiconductor substrate enables a line and a space area to be alternatively crossed in a first direction and a second direction. The word lines are formed on the upper part of the semiconductor substrate and are arranged on the line and the space area of the first direction. The bit lines are formed on the upper part of the word lines and are arranged on the line of the second direction. The memory cells are formed at intersections between the word lines and the bit lines. The insulating film is arranged between the word lines and insulates the adjacent word lines. [Reference numerals] (AA) Second direction;(BB) First direction</p> |
