发明名称
摘要 An electro-optically active organic diode has anode electrode (102), a cathode electrode (122), an electro-optically active organic layer (110) arranged between the electrodes (102, 122) and a charge carrier organic layer (116) arranged between said electro-optically active organic layer (110) and said cathode electrode layer (122), and adjacent to said electro-optically active organic layer (110). The charge carrier organic layer (116) is formed of a highly doped organic semiconductor material. A short protection layer (120) is arranged between said cathode electrode layer (122) and said charge carrier organic layer (116), and adjacent to said cathode electrode layer (122), wherein said short protection layer (120) is formed of an inorganic semiconductor material. The short protection layer prevents direct contact between the cathode layer and the charge carrier organic layer, which reduces the risk that the cathode layer will have detrimental impact on the charge carrier organic layer. This reduces the risk of a short to occur between the cathode and the anode, which results in increased reliability of the organic diode.
申请公布号 JP5361719(B2) 申请公布日期 2013.12.04
申请号 JP20090520107 申请日期 2007.07.13
申请人 发明人
分类号 H01L51/50;F21Y105/00;G09F9/30;H01L27/32;H01L51/42;H05B33/04 主分类号 H01L51/50
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