| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a p-type gallium nitride semiconductor region by an ion implantation method. <P>SOLUTION: In the method for forming a p-type gallium nitride semiconductor region, a gallium nitride semiconductor film 13 is ion-implanted with a p-type dopant 17 by using a mask 15 to form a gallium nitride semiconductor film 13b. After the mask 15 is removed, the gallium nitride semiconductor film 13 is thermally treated in an atmosphere 21 containing at least either ammonia or hydrazine compound, without the formation of a cap film, or the like, on the surface of a gallium nitride semiconductor film 13e, at a temperature T<SB>A</SB>, forming a p-type gallium nitride semiconductor region 13h. The surface of the gallium nitride semiconductor film 13e is exposed to the atmosphere 21. A gallium nitride semiconductor film 13g is formed by a thermal treatment. The gallium nitride semiconductor film 13g includes a region 13h, where the implanted ion is activated and a region 13d which is kept undoped. as it is. <P>COPYRIGHT: (C)2009,JPO&INPIT |
