| 摘要 |
The present invention provides a method which improves the yield rate of a GaN wafer production process by forming a functional thin film such as SiNx island which makes it easy to separate a substrate on a substrate during a process of growing a GaN single crystal thick film on a substrate such as a sapphire substrate, growing a GaN nucleus layer and a GaN thick film on the functional thin film, and easily separating the substrate by a laser lift-off (LLO) process. [Reference numerals] (AA) Start;(BB) End;(S310) Prepare a sapphire substrate;(S320) Form a SiNx island;(S330) Grow a GaN nucleus layer;(S340) Grow a GaN thick film;(S350) LLO substrate separation |
