| 摘要 |
To provide a sputtering target structure which has good machinability and thermal conductivity and has good wettability with soldering materials, which is inexpensive and can be used repeatedly for a long period of time, and which is free from problems of cracking and peeling of the sputtering target therein, a sputtering target structure is formed by bonding a sputtering target and a backing plate. The backing plate is formed of a material that has the difference in the linear expansion coefficient between it and the sputtering target material of at most 2�10-6/K, and a copper plate having a thickness of from 0.3 to 1.5 mm is disposed on at lest one face of the backing plate. |
