| 摘要 |
<p>PURPOSE: A method for manufacturing a CIGS based thin film is provided to improve the efficiency of a CIS based thin film solar cell by reducing cavity voids between a back electrode and a CIS based thin film. CONSTITUTION: A back electrode is deposited on a substrate(S100). Indium is deposited on the back electrode(S200). Indium selenium is formed by a first selenization process(S300). Copper is deposited on the indium selenium(S400). A CIS based absorbing layer is formed by a second selenization process(S500). [Reference numerals] (AA) Start; (BB) End; (S100) Step of depositing a back electrode on a substrate; (S200) Step of depositing In metal on the back electrode; (S300) Step of forming In_X_Se_Y by a first selenization process; (S400) Step of depositing Cu metal on In_X_Se_Y; (S500) Step of forming a CIS based absorbing layer by a second selenization process</p> |
