发明名称 Semiconductor device and manufacturing method thereof
摘要 A semiconductor device and its manufacturing method are offered to increase the number of semiconductor devices obtained from a semiconductor wafer while simplifying a manufacturing process. After forming a plurality of pad electrodes in a predetermined region on a top surface of a semiconductor substrate, a supporter is bonded to the top surface of the semiconductor substrate through an adhesive layer. Next, an opening is formed in the semiconductor substrate in a region overlapping the predetermined region. A wiring layer electrically connected with each of the pad electrodes is formed in the opening. After that, a stacked layer structure including the semiconductor substrate and the supporter is cut by dicing along a dicing line that is outside the opening.
申请公布号 US8598720(B2) 申请公布日期 2013.12.03
申请号 US20090575687 申请日期 2009.10.08
申请人 TOMITA HIROAKI;SUTOU KAZUYUKI;SANYO SEMICONDUCTOR CO., LTD.;SANYO SEMICONDUCTOR MANUFACTURING CO., LTD.;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 TOMITA HIROAKI;SUTOU KAZUYUKI
分类号 H01L29/40 主分类号 H01L29/40
代理机构 代理人
主权项
地址