发明名称 |
Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure |
摘要 |
Provided is an epitaxial substrate for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate for semiconductor device obtained by forming, on a base substrate, a group of group III nitride layers by lamination such that a (0001) crystal plane of each layer is approximately parallel to a substrate surface includes: a channel layer formed of a first group III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); and a barrier layer formed of a second group III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0), wherein the second group III nitride is a short-range-ordered mixed crystal having a short-range order parameter alpha satisfying a range where 0@alpha@1. |
申请公布号 |
US8598626(B2) |
申请公布日期 |
2013.12.03 |
申请号 |
US20100853685 |
申请日期 |
2010.08.10 |
申请人 |
MIYOSHI MAKOTO;KURAOKA YOSHITAKA;SUMIYA SHIGEAKI;ICHIMURA MIKIYA;SUGIYAMA TOMOHIKO;TANAKA MITSUHIRO;NGK INSULATORS, LTD. |
发明人 |
MIYOSHI MAKOTO;KURAOKA YOSHITAKA;SUMIYA SHIGEAKI;ICHIMURA MIKIYA;SUGIYAMA TOMOHIKO;TANAKA MITSUHIRO |
分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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