| 摘要 |
<p>The present invention comprises a first capacitor, a first insulating layer, a second capacitor, a second insulating layer, a second wiring layer, a first via, a second via, a third via, and a fourth via. The first capacitor comprises a first wiring layer, a first dielectric film, and a first conductive layer. The first insulating layer is formed on the first capacitor. The second capacitor is formed on the first insulating layer and comprises a second conductive layer, a second dielectric film, and a third conductive layer. The second insulating layer is formed on the second capacitor. The second wiring layer is formed on the second insulating layer and comprises a first connection wiring layer and a second connection wiring layer. The first via passes through the first insulating layer and the first dielectric film, and connects the first wiring layer and the second conductive layer. The second via passes through the second insulating layer and connects the third conductive layer and the second wiring layer. The third via passes through the first insulating layer and the second insulating layer, and connects the first connection wiring layer and the first conductive layer. The fourth via passes through the first insulating layer, the second insulating layer, and the first dielectric film, and connects the second connection wiring layer and the first wiring layer.</p> |
