| 摘要 |
A semiconductor device includes a thin-film diode (1) and a protection circuit with a protection diode (20). The thin-film diode (1) includes: a semiconductor layer with first, second and channel regions; a gate electrode; a first electrode (S1) connected to the first region and the gate electrode; and a second electrode (D1) connected to the second region. The conductivity type of the thin-film diode (1) may be N-type and the anode electrode of the protection diode (20) may be connected to a line (3) that is connected to either the gate electrode or the first electrode of the thin-film diode (1). Or the conductivity type of the thin-film diode may be P-type and the cathode electrode of the protection diode may be connected to the line that is connected to either the gate electrode or the first electrode of the thin-film diode. The protection circuit includes no other diodes that are connected to the line (3) so as to have a current flowing direction opposite to the protection diode's (20). As a result, deterioration of a thin-film diode due to ESD can be reduced with an increase in circuit size minimized. |
