发明名称 |
Solid-state imaging device |
摘要 |
A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area. |
申请公布号 |
US8598640(B2) |
申请公布日期 |
2013.12.03 |
申请号 |
US201113211362 |
申请日期 |
2011.08.17 |
申请人 |
KITANO YOSHIAKI;ABE HIDESHI;KUROIWA JUN;HIRATA KIYOSHI;OHKI HIROAKI;KARASAWA NOBUHIRO;TAKIZAWA RITSUO;YAMASHITA MITSURU;SATO MITSURU;KOKUBUN KATSUNORI;SONY CORPORATION |
发明人 |
KITANO YOSHIAKI;ABE HIDESHI;KUROIWA JUN;HIRATA KIYOSHI;OHKI HIROAKI;KARASAWA NOBUHIRO;TAKIZAWA RITSUO;YAMASHITA MITSURU;SATO MITSURU;KOKUBUN KATSUNORI |
分类号 |
H01L31/113;H01L27/146;H01L27/148;H04N5/335 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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