| 摘要 |
PURPOSE: A sapphire single crystal growth apparatus is provided to obtain an excellent single crystal by checking the temperature of a crucible using a temperature sensor and maintaining proper growth temperature. CONSTITUTION: A hot zone is formed inside a growth path. Raw material of a single crystal is accepted in a crucible(20). The crucible is formed inside the growth path. The crucible is comprised of graphite. The inner side of the crucible is coated with boron nitride. A support stand(30) supports the crucible. The support stand comprises a temperature sensor(70) measuring the temperature of the raw material. A heater(50) is installed in around the crucible. The heater heats the crucible. An insulating member prevents heat generated in the heater to get out. |
