发明名称 LASER CRYSTALLIZATION APPARATUS AND SILICON CRYSTALLIZATION METHOD USING THE SAME
摘要 A laser crystallization apparatus is provided to improve the number of effective laser pulses irradiated to the same position of a substrate by including a stage with a tilt angle. A laser irradiating apparatus(100) irradiates a laser. A stage(130) is inclined by a tilt angle, corresponding to the laser irradiating apparatus. A plurality of pins(140) are mounted on the stage, vertically transferring. The laser irradiating apparatus can include a laser generating part for generating a laser beam, a reflection mirror(121,122,123) for varying the progression direction of the laser beam emitted through the laser generating part, and a single homogenizer(124) for making uniform the energy density of the laser beam whose progression direction is varied by the reflection mirror.
申请公布号 KR101335639(B1) 申请公布日期 2013.12.03
申请号 KR20060109038 申请日期 2006.11.06
申请人 发明人
分类号 H01L21/20;H01L21/268 主分类号 H01L21/20
代理机构 代理人
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