| 摘要 |
<p>The present invention provides an array substrate and a manufacturing method including a step of forming a gate wire having a triple-layered structure on a substrate with a pixel area, a second layer of copper, and a third layer of nitrified copper and forming a gate electrode connected to the gate wire; a step of forming a gate insulating film having a single layered structure of oxidized silicon (SiO2) on the gate electrode and the gate wire; a step of forming an etch stopper and an oxide semiconductor layer of an island form, overlapped on the gate insulating film corresponding to the gate electrode; a step of forming a drain electrode and a source electrode touching each end of the oxide semiconductor layer by being separated from each other on the etch stopper and a data wire defining the pixel area by intersecting with the gate wire on the gate insulating film; a step of forming a protective layer having a drain contact hole exposing the drain electrode and formed of the oxidized silicon (SiO2) on the data wire, the source electrode, and the drain electrode; and a step of forming the pixel electrode touching the drain electrode through the drain contact hole on the protective layer. [Reference numerals] (AA) Start</p> |
