TA-IN-ZN-O AMORPHOUS OXIDE, METHOD FOR PREPARING THE SAME AND FIELD EFFECT TRANSISTOR COMPRISING THE SAME

摘要

The present invention relates to an amorphous oxide and a transistor with a field effect using the same, and more specifically, to TA-IN-ZN-O amorphous oxide, method for preparing the same, and transistor which has channel layer including TA-IN-ZN-O amorphous oxide and provides field effect, wherein the TA-IN-ZN-O amorphous oxide is synthesized in an amorphous state by controlling charge density by adding tantalum to a material including indium and zinc.