发明名称 |
Methods of manufacturing semiconductor structures and devices including nanotubes, and semiconductor structures, devices, and systems fabricated using such methods |
摘要 |
A method of forming a plurality of nanotubes is disclosed. Particularly, a substrate may be provided and a plurality of recesses may be formed therein. Further, a plurality of nanotubes may be formed generally within each of the plurality of recesses and the plurality of nanotubes may be substantially surrounded with a supporting material. Additionally, at least some of the plurality of nanotubes may be selectively shortened and at least a portion of the at least some of the plurality of nanotubes may be functionalized. Methods for forming semiconductor structures intermediate structures, and semiconductor devices are disclosed. An intermediate structure, intermediate semiconductor structure, and a system including nanotube structures are also disclosed. |
申请公布号 |
US8598689(B2) |
申请公布日期 |
2013.12.03 |
申请号 |
US201113179316 |
申请日期 |
2011.07.08 |
申请人 |
SANDHU GURTEJ S.;GILTON TERRY L.;MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ S.;GILTON TERRY L. |
分类号 |
H01L33/62;H01L23/48;H01L29/06;H01L29/739 |
主分类号 |
H01L33/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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