发明名称 |
Back-illuminated type solid-state imaging device |
摘要 |
A method for manufacturing a back-illuminated type solid-state imaging device by (a) providing a substrate having, on a front surface side thereof, a semiconductor film on a semiconductor substrate with an insulation film therebetween; (b) forming in the semiconductor substrate a charge accumulation portion of a photoelectric conversion element that constitutes a pixel; (c) forming in the semiconductor film at least some transistors that constitute the pixel; and (d) forming on a rear surface side of the semiconductor substrate a rear surface electrode to which a voltage can be applied. |
申请公布号 |
US8597972(B2) |
申请公布日期 |
2013.12.03 |
申请号 |
US20100970419 |
申请日期 |
2010.12.16 |
申请人 |
MABUCHI KEIJI;SONY CORPORATION |
发明人 |
MABUCHI KEIJI |
分类号 |
H01L31/18;H01L27/146;H04N5/335;H04N5/353;H04N5/359;H04N5/369;H04N5/374 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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