发明名称 |
Negative resist composition and patterning process |
摘要 |
A negative resist composition comprises a base polymer comprising recurring units having an alkylthio group and having a Mw of 1000-2500, an acid generator, and a basic component, typically an amine compound containing a carboxyl group, but not active hydrogen. A 45-nm line-and-space pattern with a low value of LER can be formed. |
申请公布号 |
US8597868(B2) |
申请公布日期 |
2013.12.03 |
申请号 |
US20100980447 |
申请日期 |
2010.12.29 |
申请人 |
DOMON DAISUKE;MASUNAGA KEIICHI;TANAKA AKINOBU;WATANABE SATOSHI;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
DOMON DAISUKE;MASUNAGA KEIICHI;TANAKA AKINOBU;WATANABE SATOSHI |
分类号 |
G03F7/004;G03F7/26 |
主分类号 |
G03F7/004 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|