发明名称 Negative resist composition and patterning process
摘要 A negative resist composition comprises a base polymer comprising recurring units having an alkylthio group and having a Mw of 1000-2500, an acid generator, and a basic component, typically an amine compound containing a carboxyl group, but not active hydrogen. A 45-nm line-and-space pattern with a low value of LER can be formed.
申请公布号 US8597868(B2) 申请公布日期 2013.12.03
申请号 US20100980447 申请日期 2010.12.29
申请人 DOMON DAISUKE;MASUNAGA KEIICHI;TANAKA AKINOBU;WATANABE SATOSHI;SHIN-ETSU CHEMICAL CO., LTD. 发明人 DOMON DAISUKE;MASUNAGA KEIICHI;TANAKA AKINOBU;WATANABE SATOSHI
分类号 G03F7/004;G03F7/26 主分类号 G03F7/004
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