| 摘要 |
<p>Deposited are smooth silicon films and smooth strained silicon films having a low compressive stress through plasma-enhanced chemical vapor deposition (PECVD) using process gas including a silicone containing precursor (for example, silane), argon, and a second gas, for example, helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicone films and smooth silicone germanium films are acquired by adding a germanium-containing precursor or a source of a dopant to the process gas. In some embodiments, film roughness is improved by using dual frequency plasma including high frequency (HF) and low frequency (LF) components in a deposition. When the films are measured by an atomic force microscope (AFM), the roughness (Ra) is less than about 7Å, for example, less than about 5Å, and a compressive stress is less than about 500 MPa as an absolute value. In some embodiments, smooth strained silicon films are obtained. [Reference numerals] (101) Provide a substrate for a PECVD process chamber;(103) Provide process gas including silicone containing precursor, argon, and a second gas (for example, helium and/or hydrogen) for a process chamber;(105) Form dual frequency plasma for depositing smooth silicon films and smooth strained silicone films having a low compressive stress;(AA) Start;(BB) End</p> |
