发明名称 |
Thin film transistor and manufacturing method thereof |
摘要 |
Disclosed is a thin film transistor including: a gate insulating layer covering a gate electrode; a microcrystalline semiconductor region over the gate insulating layer; a pair of amorphous semiconductor region over the microcrystalline semiconductor; a pair of impurity semiconductor layers over the amorphous semiconductor regions; and wirings over the impurity semiconductor layers. The microcrystalline semiconductor region has a surface having a projection and depression on the gate insulating layer side. The microcrystalline semiconductor region includes a first microcrystalline semiconductor region which is not covered with the amorphous regions and a second microcrystalline semiconductor region which is in contact with the amorphous semiconductor regions. A thickness d1 of the first microcrystalline semiconductor region is smaller than a thickness d2 of the second microcrystalline semiconductor region and d1 is greater than or equal to 30 nm. |
申请公布号 |
US8598586(B2) |
申请公布日期 |
2013.12.03 |
申请号 |
US20100970460 |
申请日期 |
2010.12.16 |
申请人 |
ISA TOSHIYUKI;HIROSE ATSUSHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISA TOSHIYUKI;HIROSE ATSUSHI |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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