| 摘要 |
<p>Provided are a method for non-volatile memory cells and a device thereof. A memory cell comprises a floating gate formed on a substrate, a tunneling dielectric formed on the upper side of the floating gate, and an erasing gate formed on the upper side of the tunneling dielectric. Side dielectrics surround the tunneling dielectric. Secondary gates and connection gates are formed on both sides of a memory cell and are separated from the floating gate of the memory cell by the side dielectrics. A method for forming memory cells comprises a step for depositing the floating gate on a dielectric layer which is positioned on a semiconductor substrate; a step for depositing the tunneling dielectric on the floating gate; a step for depositing the erasing gate on the tunneling dielectric; a step for forming the memory cells having vertical sides by patterning the erasing gate, the tunneling dielectric, and the floating gate; and a step for sealing tunneling dielectrics by depositing the side dielectrics on the vertical sides of the memory cells. The memory cells are completed by performing additional steps. [Reference numerals] (13) Substrate;(7) Common source(CS)</p> |
