SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The present invention relates to a semiconductor light-emitting device, comprising: a substrate; multiple nanostructures, each of which includes a first conduction-type semiconductor layer core, an activation layer, and a second conduction-type semiconductor layer, spaced out on the substrate, a filler filling the gap between the multiple nanostructures and formed lower than the nanostructures; and a semiconductor light-emitting device, which includes an electrode covering the upper part and part of the sides of the nanostructures and electrically-connected to the second conduction-type semiconductor layer.