发明名称 Semiconductor device and method for manufacturing the same
摘要 In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.
申请公布号 US8597977(B2) 申请公布日期 2013.12.03
申请号 US13718051 申请日期 2012.12.18
申请人 发明人
分类号 H01L0021/000016 主分类号 H01L0021/000016
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