发明名称 |
Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage |
摘要 |
A lateral diffused metal-oxide-semiconductor field effect transistor (LDMOS transistor) employs a stress layer that enhances carrier mobility (i.e., on-current) while also maintaining a high breakdown voltage for the device. High breakdown voltage is maintained, because an increase in doping concentration of the drift region is minimized. A well region and a drift region are formed in the substrate adjacent to one another. A first shallow trench isolation (STI) region is formed on and adjacent to the well region, and a second STI region is formed on and adjacent to the drift region. A stress layer is deposited over the LDMOS transistor and in the second STI region, which propagates compressive or tensile stress into the drift region, depending on the polarity of the stress layer. A portion of the stress layer can be removed over the gate to change the polarity of stress in the inversion region below the gate. |
申请公布号 |
US8598660(B2) |
申请公布日期 |
2013.12.03 |
申请号 |
US201113150612 |
申请日期 |
2011.06.01 |
申请人 |
CAMILLO-CASTILLO RENATA;DAHLSTROM ERIK MATTIAS;GAUTHIER, JR. ROBERT J.;GEBRESELASIE EPHREM G.;PHELPS RICHARD A.;RANKIN JED HICKORY;SHI YUN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAMILLO-CASTILLO RENATA;DAHLSTROM ERIK MATTIAS;GAUTHIER, JR. ROBERT J.;GEBRESELASIE EPHREM G.;PHELPS RICHARD A.;RANKIN JED HICKORY;SHI YUN |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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