发明名称 Reactive physical vapor deposition with sequential reactive gas injection
摘要 The present invention provides a method of controlling a reactive sputtering system used in coating processes. More specifically, the present invention provides a microprocessor-based control system for reactive gases in a sputtering system, particularly during the start-up phase of operation. The preferred demand for such a reactive gas is predicted for every stage of the operation, and the reactive gas supply is amenable to predictive control provided by object program-driven mathematical formulae. The injection of reactive gas using time-advanced, sequential, mathematically-derived procedures simplifies overall system operation and provides a system with an optimal amount of reactive gas at an optimal time.
申请公布号 US8597473(B1) 申请公布日期 2013.12.03
申请号 US20050161976 申请日期 2005.08.24
申请人 ONISHI SHINZO;UNIVERSITY OF SOUTH FLORIDA 发明人 ONISHI SHINZO
分类号 C23C14/00;C23C;C23C14/24;C23C14/32;C25B9/00;C25B11/00;C25B13/00 主分类号 C23C14/00
代理机构 代理人
主权项
地址