发明名称 ATMOSPHERIC PRESSURE PLASMA SOURCE
摘要 <p>The present invention relates to an atmospheric pressure plasma source applied to biotechnology or medical treatment. The invention is suggested to solve a problem that a processing effect is not clearly made because plasma does not directly touch a subject in an existing electrode structure. According to the present invention, an X electrode and a Y electrode are formed on a side of a board with photolithography and are coated with a dielectric, a secondary electron generating layer, and a hydration preventing layer. With the photolithography, low power and high density plasma surface discharge is enabled by increasing electrode density, plasma can directly touch the subject, and the life span of a plasma source becomes protracted through the hydration preventing layer.</p>
申请公布号 KR20130130324(A) 申请公布日期 2013.12.02
申请号 KR20120054037 申请日期 2012.05.22
申请人 KWANGWOON UNIVERSITY INDUSTRY-ACADEMIC COLLABORATION FOUNDATION 发明人 CHOI, EUN HA;LEE, SANG HAK
分类号 H05H1/24;H01J27/16;H01L21/027 主分类号 H05H1/24
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