发明名称 Process for manufacturing a selective photoresistive sensor
摘要 The invention relates to the manufacture of semiconductor electronic components, namely to the production of electronic devices for qualitative analysis of the composition of solids, liquids and gases, in optoelectronics of fiber-optic communication lines, as well as in the manufacture of selective eyes for the robot industry.The process for manufacturing a selective photoresistive sensor includes the obtaining of a semiconductor layer photosensitive to the corresponding radiation, its location in the form of a sandwich between two planar metal electrodes, one of which is semitransparent, to which are soldered conductors for the application of an electric field on the photosensitive layer. As photosensitive layer is used a single-crystal wafer with perfect and strictly parallel to the atomic level faces, obtained by splitting a single crystal parallel to the cleavage plane by breaking the weak Van der Waals couplings of a layered semiconductor compound, selected with different mobility of the charge carriers, which determines the polarity of the electric field applied to the photosensitive layer.
申请公布号 MD630(Z) 申请公布日期 2013.11.30
申请号 MDS20120120 申请日期 2012.08.24
申请人 INSTITUTUL DE INGINERIE ELECTRONICA SI NANOTEHNOLOGII "D. GHITU" AL ASM 发明人 POPOVICI NICOLAE;GRINCESIN ILIE
分类号 H01L31/08;H01L31/09;H01L31/101 主分类号 H01L31/08
代理机构 代理人
主权项
地址