| 摘要 |
<p>A method of the present invention includes a step for performing a first etching process through a hard mask layer on which multiple trenches are defined at intervals on a substrate to define a first area of a fin for a device; a step for forming an insulation material layer on the trenches; a step for performing a planarization process on the insulation material layer in order to expose the patterned hard mask layer; a step for removing the hard mask layer and performing a second etching process to define a cavity on the insulation material layer; a step for forming a second area of the fin in the cavity; and a step for performing a third etching process on the insulation material layer to make the second area of the fin have a second semiconductor material, which is different from a first semiconductor material, and to place the upper surface of the insulation material layer lower than the upper surface of the second area of the fin.</p> |
