| 摘要 |
PURPOSE: A method for processing a surface of a semiconductor device and a processing apparatus thereof are provided to prevent resistance in contact hole from increasing and electric leakage around a contact by eliminating a natural oxide film and a chemical oxide film which are formed in a surface of a silicon and a damage unit on the surface of the silicon in etching. CONSTITUTION: A plasma generation unit(110) generates plasma by using applied power. A process gas inflow unit(130) inflows a reaction gas into a chamber unit(140). The chamber unit forms a cleaning space of a silicon substrate(180). A filtration unit(150) passes a radical among plasma, which is generated in the plasma generation unit, through the silicon substrate. A substrate loading unit(160) performs a function for loading the silicon substrate. |
