| 摘要 |
PURPOSE: A programmable switch element and a manufacturing method thereof are provided to improve the performance of the programmable switch element by controlling a thermal treatment temperature and the quantity of Sb. CONSTITUTION: An SiO2 layer is formed on a substrate. An SiGeSb thin film layer is formed on the SiO2 layer. A GeSbTe thin film layer is formed on the SiGeSb thin film layer. A first terminal is formed on the GeSbTe thin film layer. The SiGeSb thin film layer functions as a high resistance heating layer. |
