发明名称 PHOTOMASK BLANK AND MANUFACTURING METHOD THEREOF
摘要 <p>- 28 - OF THE DISCLOSUREAn object of this invention is to provide a photomask blank in which there is little warpage and is which an amount of warpage change after a photomask manufacturing process ends is also small. First, a phase shift film is deposited (S101), next, the phase shift film is subjected to a heat treatment within a temperature range of 260°C to 320°C for four hours or more (S102), and thereafter a flash irradiation treatment is performed thereon (S103). A light-shielding film is deposited on the phase shift film after the aforementioned treatments (S104), to thereby obtain a photomask blank (S105).Fig. 1</p>
申请公布号 SG194284(A1) 申请公布日期 2013.11.29
申请号 SG20130020938 申请日期 2013.03.22
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 FUKAYA, SOUICHI
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