发明名称 |
THIN FILM TRANSISTOR AND PRODUCING METHOD OF THE SAME |
摘要 |
<p>The present invention relates to a thin film transistor and a manufacturing method thereof. The thin film transistor includes a base material, a channel layer, a source electrode, and a drain electrode. A barrier layer with graphene is formed between the channel layer and the source and drain electrodes. The channel layer includes an oxide semiconductor.</p> |
申请公布号 |
KR20130129506(A) |
申请公布日期 |
2013.11.29 |
申请号 |
KR20120053411 |
申请日期 |
2012.05.21 |
申请人 |
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
发明人 |
AHN, JONG HYUN;LEE, JEONG EUN |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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