COMPOSITION FOR FORMING RESIST UNDERLAYER FILM CONTAINING HYDROXYL GROUP-CONTAINING CARBAZOLE NOVOLAC RESIN

摘要

There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of of 3 to 97:97 to 3 in molar ratio:
A method for producing a semiconductor device, comprising the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film by irradiation of light or electron beams and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.