| 摘要 |
There is provided a copper alloy for electronic material which exhibits excellent plating uniformity. A copper alloy for electronic material, wherein, when its cross section parallel to a rolling direction is observed by SIM, an area ratio of amorphous structure and crystal grains having a grain size of less than 0.1 µ m at a depth range of 0.5 µ m or less from the surface is 1% or less, and a ratio of the number of crystal grains having a grain size of at least 0.1 µ m and less than 0.2 µ m to the overall number of crystal grains having a grain size of at least 0.1 µ m at a depth range of 0.2-0.5 µ m from the surface is 47.5% or more. |
