发明名称 CONTROLLING A VOLTAGE LEVEL OF AN ACCESS SIGNAL TO REDUCE ACCESS DISTURBS IN SEMICONDUCTOR MEMORIES
摘要 A semiconductor memory device stores data. The semiconductor memory device includes a plurality of memory cells for storing the data which includes access control elements providing the separation of a port or access to the port in response to an access control signal and an access control circuit which controls the access control elements connected to one of the access control lines by transmitting the access control signal through one of the lines. The access control circuit includes a power supply line for supplying a voltage to the access control line, one or more capacitors, a voltage switch circuit for connecting the capacitor with the power supply line, and an access control line switch circuit for connecting the access control line with the power supply line. The access control circuit accesses a selected memory cell connected to the access control line corresponding to a data access request signal, controls a voltage control switch circuit, and accesses the power supply line and the capacitor in order to charge the capacitor through the power supply line and reduces a voltage level of the line. The access control circuit controls the access control line switch circuit to connect the selected access control line with the voltage supply line having the reduced voltage level. [Reference numerals] (60) Control;(AA) Request data access
申请公布号 KR20130129836(A) 申请公布日期 2013.11.29
申请号 KR20130047879 申请日期 2013.04.30
申请人 ARM LIMITED 发明人 SHANMUGAM AMARNATH;MAITI BIKAS;SCHUPPE VINCENT PHILLIPPE;CHEN HSIN YU;CHONG YEW KEONG;KINKADE MARTIN JAY
分类号 G11C7/10;G11C5/14;G11C11/413 主分类号 G11C7/10
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