| 摘要 |
It is an object of the present invention to provide a cleaning agent for a substrate having a copper wiring, which makes possible to sufficiently suppress elution of metal copper, and remove impurities or particles of copper hydroxide (II), copper oxide (II) and the like, generated by the chemical mechanical polishing (CMP) process, in cleaning of a semiconductor substrate after the chemical mechanical polishing (CMP) process, in a manufacturing process of the semiconductor substrate; and a method for cleaning a semiconductor substrate having a copper wiring, characterized by using the relevant substrate cleaner for a copper wiring: and the present invention relates to a cleaning agent for a substrate having a copper wiring consisting of an aqueous solution comprising [I] an amino acid represented by the following general formula [1], and [II] an alkylhydroxylamine; and a method for cleaning a semiconductor substrate having a copper wiring characterized by using the relevant cleaning agent for a substrate having a copper wiring;
(wherein R 1 represents a hydrogen atom, a carboxymethyl group or a carboxyethyl group; and R 2 and R 3 each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, which may have a hydroxyl group, provided that those where R 1 to R 3 are all hydrogen atoms are excluded.). |
