| 摘要 |
The present invention relates to a semiconductor memory device and, more specifically, to a semiconductor memory device capable of reducing unnecessary gate induced drain leakage (GIDL) currents in a standby state. The present invention comprises a column selection unit which controls the selection of a bit line connected to a memory cell; a column driving unit which controls the driving of the column selection unit; and a power supply unit. When a test enabling signal is inactivated, the power supply unit supplies source power to the column driving unit. When the test enabling signal is activated, the power supply unit supplies the source power to the column driving unit only in the active section of the memory cell. [Reference numerals] (155) Control unit |
