发明名称 |
METHOD FOR MANUFACTURING SILICON SUBSTRATE AND SILICON SUBSTRATE |
摘要 |
A method for manufacturing a silicon substrate, including: performing a rapid heat treatment to a silicon substrate with a rapid-heating and rapid-cooling apparatus by maintaining the silicon substrate at a temperature that is higher than 1300° C. and not greater than a silicon melting point for 1 to 60 seconds, the silicon substrate being sliced from a silicon single crystal ingot grown by the Czochralski method; performing a first temperature decrease process down to a temperature in the range of 600 to 800° C. at a temperature decrease rate of 5 to 150° C./sec; and performing a second temperature decrease process in such a mariner that a cooling time of X seconds and a temperature decrease rate of Y° C./sec meet Y@0.15X-4.5 when X<100 and meet Y@10 when X>=100.
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申请公布号 |
US2013316139(A1) |
申请公布日期 |
2013.11.28 |
申请号 |
US201213982584 |
申请日期 |
2012.02.02 |
申请人 |
OKA TETSUYA;EBARA KOJI;TAKAHASHI SHUJI;SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
OKA TETSUYA;EBARA KOJI;TAKAHASHI SHUJI |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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