| 摘要 |
A memory system includes nonvolatile memory cells each configured to store more than one bit of data, dummy memory cells adjacent to the nonvolatile memory cells, and a control section that applies a read voltage to the nonvolatile memory cells while a first voltage is applied to a gate of the dummy memory cells, when data of the nonvolatile memory cells are read out. The first voltage is higher than a second voltage for turning on the nonvolatile memory cells whose data are not read during the read out.
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