SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent contamination of a TFT due to Cu by sandwiching of Cu interconnections with silicon nitride films.SOLUTION: A semiconductor device comprises: a crystalline semiconductor film; a gate insulation film on the crystalline semiconductor film; a gate electrode on the gate insulation film; a first interlayer insulation film on the crystalline semiconductor film and the gate electrode; a first interconnection electrically connected to the crystalline semiconductor film via a first contact part provided on the first interlayer insulation film; a first silicon nitride film on the first interlayer insulation film and the first interconnection, which includes a second contact part obtained by exposure of a part of the first interconnection; a second interlayer insulation film on the first silicon nitride film; a barrier layer provided on the first interconnection exposed by the second contact part, for preventing diffusion of Cu; a second interconnection on the barrier layer provided on the second contact part, which is composed of Cu; and a second silicon nitride film provided by covering the second interconnection.