| 摘要 |
PROBLEM TO BE SOLVED: To provide manufacturing methods of a semiconductor element aggregate and a semiconductor element with reduction of costs, which have conductive support bodies without being eroded by an etchant of a lift-off layer even when a material having no appropriate selective etchant is used for the lift-off layer.SOLUTION: A semiconductor element manufacturing method of the present embodiment comprises a plating process for forming a conductive support body 134, which is performed so as to incorporate a first metal 128 which is soluble to an etchant by second metals 120, 132 which are not soluble to an etchant, and so as to form a through hole 136 in the second metals 120, 132 for supplying an etchant. |
