| 摘要 |
A method is disclosed for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming a first dielectric layer on a surface of the semiconductor substrate based on a first-type oxidation, and forming a high-K dielectric layer on a surface of the first dielectric layer. The method also includes performing a first thermal annealing process to remove the first dielectric layer between the semiconductor substrate and the high-K dielectric layer such that the high-K dielectric layer is on the surface of the semiconductor substrate. Further, the method includes performing a second thermal annealing process to form a second dielectric layer on the surface of the semiconductor substrate between the semiconductor substrate and the high-K dielectric layer, based on a second-type oxidation different from the first-type oxidation, such that high-K dielectric layer is on the second dielectric layer instead of the first dielectric layer.
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