发明名称 |
HEMT GaN DEVICE WITH A NON-UNIFORM LATERAL TWO DIMENSIONAL ELECTRON GAS PROFILE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain.
|
申请公布号 |
US2013313612(A1) |
申请公布日期 |
2013.11.28 |
申请号 |
US201213478609 |
申请日期 |
2012.05.23 |
申请人 |
KHALIL SAMEH;BOUTROS KARIM S.;SHINOHARA KEISUKE;HRL LABORATORIES, LLC |
发明人 |
KHALIL SAMEH;BOUTROS KARIM S.;SHINOHARA KEISUKE |
分类号 |
H01L29/778;H01L21/336 |
主分类号 |
H01L29/778 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|