发明名称 |
A HIGH ELECTRON MOBILITY FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain. |
申请公布号 |
WO2013176905(A1) |
申请公布日期 |
2013.11.28 |
申请号 |
WO2013US40441 |
申请日期 |
2013.05.09 |
申请人 |
HRL LABORATORIES, LLC |
发明人 |
KHALIL, SAMEH;BOUTROS, KARIM S. |
分类号 |
H01L29/778;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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