发明名称 Gallium ION Source and Materials Therefore
摘要 In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species.
申请公布号 US2013313971(A1) 申请公布日期 2013.11.28
申请号 US201213477253 申请日期 2012.05.22
申请人 BILOIU COSTEL;CHANEY CRAIG R.;BASSOM NEIL J.;COLOMBEAU BENJAMIN;RODIER DENNIS P.;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 BILOIU COSTEL;CHANEY CRAIG R.;BASSOM NEIL J.;COLOMBEAU BENJAMIN;RODIER DENNIS P.
分类号 H01J27/20 主分类号 H01J27/20
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