发明名称 |
Gallium ION Source and Materials Therefore |
摘要 |
In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species. |
申请公布号 |
US2013313971(A1) |
申请公布日期 |
2013.11.28 |
申请号 |
US201213477253 |
申请日期 |
2012.05.22 |
申请人 |
BILOIU COSTEL;CHANEY CRAIG R.;BASSOM NEIL J.;COLOMBEAU BENJAMIN;RODIER DENNIS P.;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
BILOIU COSTEL;CHANEY CRAIG R.;BASSOM NEIL J.;COLOMBEAU BENJAMIN;RODIER DENNIS P. |
分类号 |
H01J27/20 |
主分类号 |
H01J27/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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