发明名称 METHOD FOR FORMING GRAPHENE FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a graphene film with high in-plane uniformity and reproducibility and less damage.SOLUTION: The formation of a graphene film with high in-plane uniformity and reproducibility and less damage becomes possible by performing a reduction step of heating a metal film under a hydrogen gas atmosphere, a graphene film growth step of heating the metal film under a mixed gas atmosphere in which the composition ratio of a propylene gas to a hydrogen gas is 10 ppm or more and less than 1,000 ppm, and a cooling step of cooling the metal film.
申请公布号 JP2013237575(A) 申请公布日期 2013.11.28
申请号 JP20120110227 申请日期 2012.05.14
申请人 PANASONIC CORP 发明人 YOSHII SHIGEO;NOZAWA KATSUYA;MATSUKAWA NOZOMI
分类号 C01B31/02 主分类号 C01B31/02
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