| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor formed of a normally-off type nitride semiconductor which can obtain a sufficiently large current density, and to provide a method for manufacturing the same.SOLUTION: An AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type GaN layer 105 and a high concentration p-type GaN layer 106 are sequentially formed on a substrate 101. A gate electrode 111 is ohmic-contacted to the high concentration p-type GaN layer 106. A source electrode 109 and a drain electrode 110 are provided on the undoped AlGaN layer 104. A pn-junction generated by two-dimensional electron gas generated on the interface between the undoped AlGaN layer 104 and the undoped GaN layer and by the p-type GaN layer 105 is formed on a gate region, and accordingly the gate voltage can be increased. |
