SEMICONDUCTOR WIRE-ARRAY VARACTOR STRUCTURES

摘要

Semiconductor variable capacitor (varactor) devices are provided, which are formed with an array of radial p-n junction structures to provide improved dynamic range and sensitivity. For example, a semiconductor varactor device includes a doped semiconductor substrate having first and second opposing surfaces and an array of pillar structures formed on the first surface of the doped semiconductor substrate. Each pillar structure includes a radial p-n junction structure. A first metallic contact layer is conformally formed over the array of pillar structures on the first surface of the doped semiconductor substrate. A second metallic contact layer formed on the second surface of the doped semiconductor substrate. An insulating layer is formed on the doped semiconductor substrate surrounding the array of pillar structures.