SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to the present invention, a silicon carbide substrate (10) has a first conductivity type. The silicon carbide substrate (10) has a first surface (P1) provided with a first electrode (41), and a second surface (P2) provided with first trenches (TR1) disposed at a distance from each other. A gate layer (21) covers the internal surface of each of the first trenches (TR1). The gate layer (21) has a second conductivity type, which is different from the first conductivity type. A filling part (31) fills each of the first trenches (TR1) covered by the gate layer (21). A second electrode (42) is separated from the gate layer (21) and provided on the second surface (P2) of the silicon carbide substrate. A gate electrode (40) is electrically insulated from the silicon carbide substrate (10) and electrically connected to the gate layer (21). A silicon carbide semiconductor device that can be readily manufactured is thereby provided.