METHOD FOR MANUFACTURING GRAPHENE-BASED DUAL-GATE MOSFET

摘要

The present invention relates to the field of microelectronics and solid-state electronics. Provided is a method for manufacturing a graphene-based dual-gate MOSFET. The method comprises: growing a layer of high-quality SiO2 on monocrystalline silicone, then spin coating on the SiO2 a layer of high polymer to serve as a source of carbon in preparing graphene; then, depositing on the high polymer a layer of catalytic metal, and, by high-temperature annealing, forming the graphene at an interface between the SiO2 layer and the catalytic metal layer; by utilizing a lithography technique and an etching process, opening a window on the catalytic metal layer and forming a source electrode and a drain electrode of a transistor; utilizing an atomic deposition system to deposit a layer of high-K thin-film in the window area, then preparing a front metal gate over the high-K thin-film, and finally, preparing a metal rear gate electrode on the rear face of the Si substrate, thus ultimately forming the graphene channel material- and high-K dielectric-based dual-gate MOSFET component.